The Applied Centura AdvantEdge G3 Silicon Etch for advanced memory and logic applications features refined performance tuning capabilities offering greater flexibility, faster step-to-step responsiveness, and leading on-wafer performance and productivity at 65nm and beyond.
AdvantEdge G3 improves wafer temperature tuning to offer both a greater range of center-to-edge thermal gradients and better temperature uniformity. An increase in ramping rate facilitates rapid step-to-step optimization over a wide temperature range. Improved chamber thermal conductivity eliminates first-wafer effects. These improvements in thermal control plus the chamber’s tunable dual-coil source; optimized gas distribution; and dual-zone helium cooling create a uniformity tuning window for the most stringent CD control and consistency across the wafer. An optimized RF system, and the reactor’s temperature-controlled surfaces guarantee wafer-to-wafer process repeatability. Compact system configuration, simplified design, and lightweight components streamline serviceability and trim mean time to clean and recover.
With optional integrated optical CD metrology, the AdvantEdge G3 can compensate for incoming pattern inconsistencies and extend 193nm lithography as well. Onboard fast data acquisition and high volume/high speed data streaming facilitate advanced process control. Process state monitoring capabilities enable process and productivity improvements, chamber matching, and more efficient routine maintenance scheduling. An optional high temperature cathode extends AdvantEdge capabilities to metal gate and high-k applications.
