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AKT's Low Temperature Polysilicon PECVD technology
for manufacturing bright, high-resolution, low-power TFT-LCDs features
a multi-step (SiN/SiO2/a-Si) single chamber deposition process
that provides the industry's highest quality, hydrogen-controlled
polysilicon precursor film at temperatures up to 430°C. A separate pre-heat/post-deposition chamber significantly reduces
hydrogen in the deposited silicon film while increasing system
throughput. The reduced hydrogen content in the polysilicon precursor
film enables rapid conversion of the film into polysilicon with
an excimer laser anneal process or other complementary activation
processes performed in a separate system.
Currently 3 platforms are available for low temperature polysilicon
according to the substrate size: the AKT-1600 PX PECVD for up to
370mm x 470mm substrates, the AKT-4300 PX PECVD for up to 620mm
x 750mm substrates and the AKT-5500 PX PECVD for up to 730mm x
920mm substrates. |