Applied Materials extends copper barrier/seed PVD (Physical Vapor Deposition) technology to the 45nm/55nm node and beyond for Logic and Memory applications with the Applied Endura CuBS (Copper Barrier/Seed) PVD system. The SIP (Self-Ionized Plasma) EnCoRe II Ta(N) barrier and Cu seed process chambers feature high ionization PVD technology that delivers full coverage, low-temperature film deposition, with minimal overhang and smooth morphology. The tunable thickness capability of SIP EnCoRe II Ta(N) enables customers to lower barrier thickness for line resistance scaling to 45nm/55nm nodes while maintaining excellent stress migration and electromigration performance through superior sidewall coverage. For the Cu seed layer, SIP EnCoRe II Cu delivers high sidewall coverage and excellent uniformity across the wafer leading to a wide ECP (Electrochemical Plating) fill window.

Aktiv Preclean
To address the increasing importance of interfaces as geometries shrink, Applied offers various preclean technologies to ensure interface integrity without impact to critical dimensions or material properties. The Endura CuBS system features the innovative Aktiv Preclean which provides breakthrough cleaning technology for efficient removal of polymeric residues and reduction of CuO while protecting porous low k inter-level dielectric (ILD) films, such as Black Diamond II. Unlike conventional reactive preclean methods, the Aktiv Preclean process results in no significant change in k-value, thus enabling the transition to next-generation low k dielectrics.

The Applied Endura CuBS PVD system sequentially deposits the Ta(N)/Ta barrier followed by the Cu seed layer under high-vacuum conditions. Integration of the complete sequence, including the innovative Aktiv Preclean, on the Endura platform ensures excellent film adhesion and oxide-free interfaces, while preserving k-value integrity for low via resistance and high device reliability.

Learn more about the Applied Endura CuBS now
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