The Applied Endura Extensa TTN offers customers maximum integration flexibility in transitioning to copper interconnect for improved device performance. Its robust deposition technology delivers the only production-worthy process capable of fulfilling barrier requirements for Flash and DRAM at 5Xnm and below.

The system’s deposition process addresses the need for scalable copper barrier and copper-aluminum or copper-tungsten diffusion barrier technology. Offering uniquely broad PVD manufacturing capability for titanium, metallic titanium nitride (TiN), and fully-nitrided TiN deposition in the same chamber without hardware changes, Extensa TTN can also accommodate Cs liner and bond pad applications, and addresses future silicide gate cap needs. High-quality deposition also facilitates substitution of titanium for tantalum as a copper barrier at substantial cost savings.

Extensa TTN’s highly uniform step coverage and sheet resistance (non-uniformity <3% 1σ) allows a thinner barrier stack to be deposited, producing low overhang, which, in turn, promotes void-free gap fill. The chamber is equipped with grounded, single-piece, CleanCoat™ aluminum kits to deliver the industry’s best defect performance (<10 @ 0.12μm) and operates at 25% lower cost of consumables than other available barrier deposition systems. Thinner film and less pasting also significantly lower the cost of ownership per wafer.

The first PVD chamber to feature a flux-shaping, dual-magnet source, Extensa TTN’s high-ionization magnet improves step coverage for advanced features (>40% for 0.10μm 4:1 aspect ratio), with low center-edge bottom and sidewall asymmetry (~1:1). Side electro-magnets enable process tuning flexibility to accommodate different types of features and to compensate for etch-related variations in feature size.

Extensa TTN is configured on the industry-leading Endura platform, delivering optimal system reliability on the only integrated single-system configuration available today for Cu interconnects.