The Applied Endura Metal Hardmask PVD system features Versa TTN technology which delivers a TiN metal hardmask film used for patterning copper/low k interconnects and high aspect ratio contact structures. For dielectrics with k≤2.5, a metal hardmask patterning scheme preserves the k-value integrity by minimizing damage caused by the plasma and strip processes, and reducing the thickness requirement for the underlying barrier film. The TiN hardmask, with significantly higher etch selectivity to the dielectric compared to photoresist, enables a thinner patterning film stack, and enables superior CD and profile control.

Versa TTN provides outstanding TiN film uniformity and defect performance. When integrated with Dual Mode Degas on the Endura platform, this hardmask film solution delivers unmatched system throughput and low cost of ownership, with extendibility to the 32nm node.

50nm contacts etched with TiN hard mask.