The Applied Opus AdvantEdge Metal Etch system, configured with three AdvantEdge etch chambers and two Axiom strip/passivation chambers, boosts output by 50% for standard aluminum interconnect applications. With a mere 10% increase in footprint compared to Centura AP platforms, Opus is designed to fit within a standard etch bay to avoid creating fab layout challenges.
The system’s three elements (AdvantEdge etch chamber, Axiom strip chamber, and Centura components) are all proven in production; thus Opus makes substantially higher output a low-risk proposition. With fewer systems needed for a given output, Opus also lowers the associated capital expenditure. Higher throughput, longer mean time between cleans, and lower cost of consumables (<$0.15/RF minute) combine to lower cost of ownership by 20% over comparable systems.
Opus retains the leading-edge performance of the AdvantEdge metal etch and Axiom chambers for advanced aluminum and tungsten interconnect, TiN hard mask open, and aluminum bond pad etch. Etch-induced CD variation is less than 5nm (3σ) on today’s metal stacks while rapid throughput derives from faster etching and a more efficient strip and passivation processs that operates at double the rate of conventional microwave technology. Advanced chamber materials, clean process chemistries, and in-situ chamber cleaning capability promote low defect and particle counts, and process repeatability.
